FORMATION OF WAFERS
The formation of wafers is done by the use very pure single crystal material. The process is done by two methods.The following are the two mainly known methods used to form wafers; – Czochralski growth (CZ). This method was invented by Jan Czochralski. During this process, the formation of germanium or silicon is by pulling seed crystal from “melts.” – Float-zone crystal growth (FZ). This is a method that is used in the formation of single crystal substrate of semiconductors. It is an alternative to Czochralski growth (CZ). Unlike Czochralski growth, Float zone crystal growth produces the best semiconductor wafers. This explains why it is the commonly used method in the formation of semiconductor wafers. Tiny Zone
SILICON WAFERSSilicon is a brittle, tetravalent, gray chemical element. It makes up to 27.B% of the crust of the earth. It is among the most abundant and important elements of nature (next to oxygen). Silicon is an element that can be found in materials like agate, quartz, flint and also common beach sand among many others. In building materials such as bricks, glass and cement, silicon is the main component. Majority of different micro chips and semiconductors are built on silicon. The irony of silicon is that by itself it cannot conduct electricity very well. However, it is be able to take on dopants so as to control resistivity to the exact specification.